Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures | Zendy

Christian Joon Park | Zendy; H. Y. Cho | Zendy; Sung Kim | Zendy; SukHo Choi | Zendy; R. G. Elliman | Zendy; J. H. Han | Zendy; Chungwoo Kim | Zendy; H. N. Hwang | Zendy; Chan-Cuk Hwang | Zendy

Open Access

Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

Author(s) -

Christian Joon Park,

H. Y. Cho,

Sung Kim,

SukHo Choi,

R. G. Elliman,

J. H. Han,

Chungwoo Kim,

H. N. Hwang,

Chan-Cuk Hwang

Publication year - 2006

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2168249

Subject(s) - annealing (glass) , nanocrystal , materials science , synchrotron radiation , capacitance , photoemission spectroscopy , spectroscopy , analytical chemistry (journal) , transmission electron microscopy , germanium , non volatile memory , hysteresis , optoelectronics , x ray photoelectron spectroscopy , condensed matter physics , nanotechnology , silicon , chemistry , chemical engineering , optics , metallurgy , engineering , electrode , physics , quantum mechanics , chromatography

The annealing temperature (TA) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and TA is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation photoemission spectroscopy. Specifically, well-defined C-V characteristics with large hysteresis were found only for annealing temperatures greater than 950 °C where Ge nanocrystals are known to form. In this temperature regime, transmission electron microcopy and energy dispersive x-ray spectroscopy demonstrate the existence of regularly arranged Ge NCs of approximately 3–5 nm diameter located around 6.7 nm from the interface.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research