Dielectric and photovoltaic phenomena in tungsten-doped Pb(Mg1∕3Nb2∕3)1−xTixO3 crystal | Zendy

ChiShun Tu | Zendy; F.-T. Wang | Zendy; R. R. Chien | Zendy; V. Hugo Schmidt | Zendy; C.M. Hung | Zendy; C.-T. Tseng | Zendy

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Dielectric and photovoltaic phenomena in tungsten-doped Pb(Mg1∕3Nb2∕3)1−xTixO3 crystal

Author(s) -

ChiShun Tu,

F.-T. Wang,

R. R. Chien,

V. Hugo Schmidt,

C.M. Hung,

C.-T. Tseng

Publication year - 2006

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2165278

Subject(s) - materials science , dielectric , anomalous photovoltaic effect , band gap , optoelectronics , optics , doping , crystal (programming language) , wavelength , tungsten , photovoltaic effect , condensed matter physics , photovoltaic system , ferroelectricity , physics , computer science , metallurgy , programming language , ecology , biology

This work investigates dielectric and photovoltaic behaviors in Pb(Mg1∕3Nb2∕3)0.64Ti0.36O3 single crystal doped with 0.5mol% WO3. Dielectric permittivities measured as functions of temperature and frequency reveal two first-order-type phase transitions upon heating and cooling. The photovoltaic response strongly depends on illumination wavelength, sample thickness, and prior electric-field poling. The relation of photovoltage and light intensity under near-ultraviolet (λ=406nm) illumination for the poled samples can be expressed by an exponential equation. Optical transmission reveals that the cutoff wavelength is near 400nm and indicates a minimum electronic energy gap of ∼3.0eV.

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