Significant improvement of activation energy in MgB2∕Mg2Si multilayer films | Zendy

Yue Zhao | Zendy; Shi Xue Dou | Zendy; Mihail Ionescu | Zendy; Paul Munroe | Zendy

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Significant improvement of activation energy in MgB2∕Mg2Si multilayer films

Author(s) -

Yue Zhao,

Shi Xue Dou,

Mihail Ionescu,

Paul Munroe

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2159572

Subject(s) - materials science , pulsed laser deposition , activation energy , vortex , stoichiometry , transmission electron microscopy , anisotropy , layer (electronics) , flux pinning , flux (metallurgy) , deposition (geology) , laser , condensed matter physics , thin film , optoelectronics , composite material , superconductivity , optics , nanotechnology , high temperature superconductivity , metallurgy , chemistry , physics , paleontology , organic chemistry , sediment , biology , thermodynamics

We obtained a MgB2∕Mg2Si multilayer structure by sequentially switching a stoichiometric MgB2 target and a Si target during off-axis pulsed-laser deposition. The transmission-electron-microscopic cross-sectional image of the resulting film exhibits a layered structure with each MgB2 layer being 40–50nm thick and the Mg2Si interlayers about 5nm thick. A clearly enhanced anisotropy in the irreversibility lines and the vortex activation energy was observed. Pinning and the flux flow activation energy are significantly increased in parallel applied fields.

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