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Strong and stable ultraviolet emission from porous silicon prepared by photoetching in aqueous KF solution
Author(s) -
Katsuhiro Tomioka,
Sadao Adachi
Publication year - 2005
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2149157
Subject(s) - photoluminescence , porous silicon , ultraviolet , aqueous solution , silicon , fourier transform infrared spectroscopy , materials science , infrared , analytical chemistry (journal) , optoelectronics , photochemistry , chemistry , optics , physics , chromatography
A new method of fabricating porous silicon emitting in the ultraviolet (UV) spectral region ispresented. This method uses photoetching in an aqueous salt (KF) solution. Strong UVphotoluminescence is observed at 3.3 eV with a full width at a half maximum of 0.1 eV, whichis much narrower than those reported previously. Fourier transform infrared spectroscopy suggeststhat the surface oxide produced during photoetching plays an important role in the UV emission ofthe KF-prepared PSi

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