Improved SrTiO3 thin films using oxygen relaxation technique | Zendy

Peter K. Petrov | Zendy; Neil McN. Alford | Zendy

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Improved SrTiO3 thin films using oxygen relaxation technique

Author(s) -

Peter K. Petrov,

Neil McN. Alford

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2136432

Subject(s) - materials science , thin film , oxygen , deposition (geology) , relaxation (psychology) , microstructure , layer (electronics) , atmosphere (unit) , nanotechnology , analytical chemistry (journal) , optoelectronics , composite material , chemistry , thermodynamics , psychology , paleontology , social psychology , physics , organic chemistry , chromatography , sediment , biology

The oxygen relaxation technique for thin-film growth is explored. In this technique, films are deposited as nanoscale multilayered structures. After the deposition of each layer, the deposition process is stopped, the sample is cooled down slowly in situ in an oxygen-rich atmosphere to a temperature of 250°C, then it is heated up to the set deposition temperature for growth of the next layer. The results show that by using the oxygen relaxation technique, it is possible to improve the electrical properties and the microstructure of SrTiO3 films keeping the surface smooth and free from pinholes and pores. The oxygen relaxation technique is more efficient for smaller film thickness repetition.

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