Open AccessGrowth and properties of GaN and AlN layers on silver substrates
Author(s) -
M. Mikulics,
M. Kočan,
A. Rizzi,
P. Javorka,
Zdeněk Sofer,
Josef Stejskal,
M. Marso,
P. Kordoš,
H. Lüth
Publication year - 2005
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2135879
Subject(s) - materials science , optoelectronics , crystallite , monocrystalline silicon , epitaxy , molecular beam epitaxy , schottky diode , gallium nitride , wide bandgap semiconductor , intermetallic , nitride , diode , diffraction , schottky barrier , layer (electronics) , nanotechnology , optics , metallurgy , silicon , physics , alloy
We report on the preparation and properties of GaN and AlN layers grown by molecular-beam epitaxy on silver metal substrates. X-ray diffraction rocking curves show polycrystalline character of GaN with high preferential GaN(11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/Ag interface. On the other hand, AlN layers exhibit a monocrystalline structure with a growth direction of (0002). Schottky diodes prepared on GaN layers show good rectifying behavior and relatively low leakage current (similar to 10(-3) A/cm(2)). These results indicate that the III-nitride growth on metallic substrates might be used for low-cost and large-area electronic and photonic devices. (c) 2005 American Institute of Physics
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