Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers | Zendy

Igor P. Marko | Zendy; N. F. Massé | Zendy; Stephen J. Sweeney | Zendy; A. D. Andreev | Zendy; A.R. Adams | Zendy; Nobuaki Hatori | Zendy; Mitsuru Sugawara | Zendy

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Carrier transport and recombination in p-doped and intrinsic 1.3μm InAs∕GaAs quantum-dot lasers

Author(s) -

Igor P. Marko,

N. F. Massé,

Stephen J. Sweeney,

A. D. Andreev,

A.R. Adams,

Nobuaki Hatori,

Mitsuru Sugawara

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2135204

Subject(s) - auger effect , quantum dot , spontaneous emission , doping , atomic physics , recombination , auger , carrier generation and recombination , semiconductor , electron , excitation , quantum dot laser , radiative transfer , condensed matter physics , physics , semiconductor laser theory , materials science , laser , optoelectronics , chemistry , optics , quantum mechanics , gene , biochemistry

The radiative and nonradiative components of the threshold current in 1.3 mu m, p-doped and undoped quantum-dot semiconductor lasers were studied between 20 and 370 K. The complex behavior can be explained by simply assuming that the radiative recombination and nonradiative Auger recombination rates are strongly modified by thermal redistribution of carriers between the dots. The large differences between the devices arise due to the trapped holes in the p-doped devices. These both greatly increase Auger recombination involving hole excitation at low temperatures and decrease electron thermal escape due to their Coulombic attraction. The model explains the high T-0 values observed near room temperature. (c) 2005 American Institute of Physics.

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