The effect of dopants on the microwave dielectric properties of Ba(Mg0.33Ta0.67)O3 ceramics
Author(s) -
Kuzhichalil Peethambharan Surendran,
M. T. Sebastian,
P. Mohanan,
Mohan V. Jacob
Publication year - 2005
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2127124
Subject(s) - dopant , ionic radius , dielectric , materials science , doping , microwave , ceramic , dielectric loss , ionic bonding , analytical chemistry (journal) , inorganic chemistry , ion , chemistry , optoelectronics , composite material , organic chemistry , physics , quantum mechanics
The effect of dopants with different valencies and ionic radii on the densification, structural ordering, and microwave dielectric properties of Ba(Mg1/3Ta2/3)O3 (BMT) is investigated. It is found that dopants such as Sb2O5, MnO, ZrO2, WO3, and ZnO improve the microwave dielectric properties of BMT. Addition of trivalent dopants is detrimental to the cation ordering and dielectric properties of BMT. A correlation between the microwave dielectric properties of BMT and ionic radii of the dopant has been established. The variation of the dielectric properties of pure and doped BMT at cryogenic temperatures is also discussed
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