Strain distribution in GaN∕AlN quantum-dot superlattices | Zendy

Eirini Sarigiannidou | Zendy; E. Monroy | Zendy; B. Daudin | Zendy; JeanLuc Rouvière | Zendy; A. D. Andreev | Zendy

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Strain distribution in GaN∕AlN quantum-dot superlattices

Author(s) -

Eirini Sarigiannidou,

E. Monroy,

B. Daudin,

JeanLuc Rouvière,

A. D. Andreev

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2123394

Subject(s) - superlattice , quantum dot , materials science , transmission electron microscopy , condensed matter physics , strain (injury) , wide bandgap semiconductor , optoelectronics , high resolution transmission electron microscopy , nanotechnology , physics , medicine

The two-dimensional strain distribution in a GaN/AlN quantum-dot (QD) superlattice is measured from high-resolution transmission electron microscopy images using the geometrical phase analysis. The results are compared to elastic theoretical calculations using a combination of Fourier transform and Green's function techniques. The GaN/AlN system appears to be a model system for a comparison between theory and experiments as interdiffusion between GaN and AlN is negligible. We verify that for the case of a three-dimensional system, such as a QD, the biaxial strain approximation is not valid. Furthermore, we demonstrate that the presence of QDs induces a modulation in the strain state of the AlN barriers which is the driving force for the vertical alignment of the GaN QDs in the AlN matrix.

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