Defect energy levels in HfO2 high-dielectric-constant gate oxide | Zendy

K. Xiong | Zendy; John Robertson | Zendy; Michael C. Gibson | Zendy; Stewart J. Clark | Zendy

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Defect energy levels in HfO2 high-dielectric-constant gate oxide

Author(s) -

K. Xiong,

John Robertson,

Michael C. Gibson,

Stewart J. Clark

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2119425

Subject(s) - high κ dielectric , band gap , materials science , dielectric , vacancy defect , oxygen , oxide , valence (chemistry) , conduction band , condensed matter physics , atomic physics , electron , chemistry , optoelectronics , physics , quantum mechanics , metallurgy , organic chemistry

This letter presents calculations of the energy levels of the oxygen vacancy and oxygen interstitial defects in HfO2 using density functional methods that do not need an empirical band gap correction. The levels are aligned to those of the Si channel using the known band offsets. The oxygen vacancy gives an energy level nearer the HfO2conduction band and just above the Si gap, depending on its charge state. It is identified as the main electron trap in HfO2. The oxygen interstitial gives levels just above the oxide valence band

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