Open AccessSolid-phase epitaxial regrowth of amorphous layers in Si(100) created by low-energy, high-fluence phosphorus implantation
Author(s) -
S. Ruffell,
I. V. Mitchell,
P. J. Simpson
Publication year - 2005
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2113409
Subject(s) - annealing (glass) , epitaxy , materials science , recrystallization (geology) , amorphous solid , ion implantation , transmission electron microscopy , analytical chemistry (journal) , ion , fluence , crystallography , chemistry , nanotechnology , metallurgy , layer (electronics) , paleontology , organic chemistry , chromatography , biology
This work has been supported by the Natural Sciences and Engineering Research Council of Canada.
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