Gallium nitride microcavities formed by photoenhanced wet oxidation
Author(s) -
L.-H. Peng,
Chia-Yü Lu,
Wei-Li Wu,
S.-L. Wang
Publication year - 2005
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2103423
Subject(s) - gallium nitride , gallium , sapphire , materials science , wide bandgap semiconductor , epitaxy , resonance (particle physics) , substrate (aquarium) , dissolution , nitride , optoelectronics , chemistry , layer (electronics) , optics , nanotechnology , laser , atomic physics , oceanography , physics , geology , metallurgy
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