Open AccessFormation rates of iron-acceptor pairs in crystalline silicon
Author(s) -
Daniel Macdonald,
Thomas Roth,
Prakash N. K. Deenapanray,
Karsten Bothe,
Peter Pohl,
Jan Schmidt
Publication year - 2005
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2102071
Subject(s) - dopant , pairing , silicon , acceptor , diffusion , enthalpy , kinetics , crystalline silicon , activation energy , materials science , crystallography , chemistry , chemical physics , doping , standard enthalpy change of formation , standard enthalpy of formation , thermodynamics , condensed matter physics , metallurgy , physics , superconductivity , optoelectronics , quantum mechanics
This work has been supported by the Australian Research Council and the State of Lower Saxony.
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