Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators | Zendy

Yoshihiro Kubozono | Zendy; Takayuki Nagano | Zendy; Y. Haruyama | Zendy; Eiji Kuwahara | Zendy; Toshio Takayanagi | Zendy; Kenji Ochi | Zendy; Akihiko Fujiwara | Zendy

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Fabrication of C60 field-effect transistors with polyimide and Ba0.4Sr0.6Ti0.96O3 gate insulators

Author(s) -

Yoshihiro Kubozono,

Takayuki Nagano,

Y. Haruyama,

Eiji Kuwahara,

Toshio Takayanagi,

Kenji Ochi,

Akihiko Fujiwara

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.2081134

Subject(s) - polyimide , materials science , optoelectronics , field effect transistor , gate dielectric , fabrication , dielectric , transistor , insulator (electricity) , voltage , electrical engineering , nanotechnology , layer (electronics) , medicine , alternative medicine , engineering , pathology

Flexible C₆₀ field-effect transistor (FET) device has been fabricated with polyimide gate insulator on the poly(ethylene terephthalate) substrate, and n-channel normally-off FET properties are observed in this FET device. The field-effect mobility, ?, is estimated to be ~10^-2 cm² V^-1 s^-1 at 300 K. Furthermore, the C₆₀ FET has been fabricated with high dielectric Ba_0.4Sr_0.6Ti_0.96O₃ (BST) gate insulator, showing n-channel properties; the ? value is estimated to be ~10^-4 cm² V^-1 s^-1 at 300 K. The FET device operates at very low gate voltage, VG, and low drain-source voltage, VDS. Thus these C₆₀ FET devices possess flexibility and low-voltage operation characteristic of polyimide and BST gate insulators, respectively.