Structural and photoluminescence properties of porous GaP formed by electrochemical etching | Zendy

Katsuhiro Tomioka | Zendy; Sadao Adachi | Zendy

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Structural and photoluminescence properties of porous GaP formed by electrochemical etching

Author(s) -

Katsuhiro Tomioka,

Sadao Adachi

Publication year - 2005

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.2076445

Subject(s) - photoluminescence , materials science , band gap , scanning electron microscope , ellipsometry , etching (microfabrication) , porosity , porous medium , substrate (aquarium) , analytical chemistry (journal) , electrolyte , layer (electronics) , thin film , nanotechnology , optoelectronics , chemistry , composite material , electrode , oceanography , chromatography , geology

The structural and optical properties of porous GaP have been studied by scanning electronmicroscopy, spectroscopic ellipsometry, and photoluminescence (PL) spectroscopy. Porous GaPlayers were fabricated by anodic etching in HF:H2O:C2H5OH=1:1:2 electrolyte on n-type (100)and (111)A substrates. The morphology of the porous GaP layer is found to depend strongly on thesurface orientation. Apart from the red emission band at 1.7 eV, a supra-band-gap (EgX) emissionhas been clearly observed on the porous GaP (111)A sample. The anodic porous layer on the (100)substrate, on the other hand, has shown only the red emission at 300 K and both red and greendonor-acceptor pair emissions at low temperatures. The correlation between the PL properties andthe porous morphology is discussed. An optical transition model is also proposed for the explanationof the PL emission properties of the porous GaP samples

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