Open AccessCharacterization of Threading Dislocations in Strained-Si/SiGe Heterostructures Using Preferential Two-Step Etching and MOS-EBIC
Author(s) -
Jau-Chin Lu
Publication year - 2005
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.2063032
Subject(s) - materials science , wafer , epitaxy , etching (microfabrication) , heterojunction , layer (electronics) , optoelectronics , silicon , carrier lifetime , dislocation , optical microscope , nanotechnology , composite material , scanning electron microscope
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom