High Resolution Profiling Using Ion Scattering and Resonant Nuclear Reactions | Zendy

R. P. Pezzi | Zendy; Robert M. Wallace | Zendy; M. Copel | Zendy; Israel Jacob Rabin Baumvol | Zendy

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High Resolution Profiling Using Ion Scattering and Resonant Nuclear Reactions

Author(s) -

R. P. Pezzi,

Robert M. Wallace,

M. Copel,

Israel Jacob Rabin Baumvol

Publication year - 2005

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.2063020

Subject(s) - profiling (computer programming) , ion , nuclear reaction analysis , silicon , scattering , materials science , heavy ion , high resolution , nuclear reaction , computer science , nanotechnology , chemistry , optoelectronics , nuclear physics , physics , optics , remote sensing , geology , operating system , organic chemistry

This paper presents the basic principles of medium energy ion scattering and of nuclear resonant reaction profiling, which at present constitute available techniques for near‐surface elementary profiling with high depth resolution. The principles of ion energy loss are discussed at first, as they constitute the basic physical processes underlying the profiling techniques. Examples are presented and discussed, mainly concerning applications in the area of high‐k replacement materials for silicon oxide/oxinitride in ULSI technology. The possibility of profiling elements with nano or subnanometric resolution is giving a significant contribution to solve many problems of research and development in MOS structures for advanced ULSI technology.

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