Optical Topography Measurement of Patterned Wafers | Zendy

Xavier Colonna de Lega | Zendy

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Optical Topography Measurement of Patterned Wafers

Author(s) -

Xavier Colonna de Lega

Publication year - 2005

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.2062999

Subject(s) - wafer , materials science , nanometre , interference (communication) , ellipsometry , optics , optoelectronics , resolution (logic) , thin film , layer (electronics) , computer science , nanotechnology , composite material , telecommunications , physics , channel (broadcasting) , artificial intelligence

We model the measurement process in an interference microscope and derive libraries of signal signatures corresponding to various types of materials and thin film structures. These libraries allow calculating the top surface topography of patterned wafer features as well as the thickness of the underlying top transparent layer with nanometer height resolution. We show applications of the technique to the measurement of trenches etched in SiO2 films, post-CMP STI patterns and line structures. The results of the optical profiler are in good agreement with AFM and ellipsometer measurements of nearby structures.

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