Quantification of Shallow-junction Dopant Loss during CMOS Process
Author(s) -
G. H. Buh
Publication year - 2005
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.2062976
Subject(s) - dopant , sheet resistance , materials science , cmos , dopant activation , annealing (glass) , optoelectronics , ion implantation , doping , analytical chemistry (journal) , ion , nanotechnology , chemistry , composite material , organic chemistry , layer (electronics) , chromatography
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