Open AccessDopant Dose Metrology for Ultra-Shallow Implanted Wafers using Electron-Induced X-Ray Spectrometry at Pattern-Size Scale
Author(s) -
Pierre-F. Staub
Publication year - 2005
Publication title -
aip conference proceedings
Language(s) - Uncategorized
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.2062968
Subject(s) - wafer , metrology , materials science , throughput , optoelectronics , dopant , optics , computer science , physics , doping , telecommunications , wireless
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