Atomic and Electronic Structure Investigations of HfO2/SiO2/Si Gate Stacks Using Aberration-Corrected STEM | Zendy

Klaus van Benthem | Zendy

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Atomic and Electronic Structure Investigations of HfO2/SiO2/Si Gate Stacks Using Aberration-Corrected STEM

Author(s) -

Klaus van Benthem

Publication year - 2005

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.2062942

Subject(s) - scanning transmission electron microscopy , electron energy loss spectroscopy , materials science , transmission electron microscopy , spectroscopy , energy filtered transmission electron microscopy , atom (system on chip) , dielectric , semiconductor , high resolution transmission electron microscopy , electron , x ray photoelectron spectroscopy , resolution (logic) , optoelectronics , atomic physics , nanotechnology , nuclear magnetic resonance , physics , quantum mechanics , artificial intelligence , computer science , embedded system

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