Atomic Layer Deposition of High k Dielectric and Metal Gate Stacks for MOS Devices
Author(s) -
Yoshihide Senzaki
Publication year - 2005
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.2062940
Subject(s) - atomic layer deposition , high κ dielectric , materials science , x ray reflectivity , dielectric , tin , fabrication , optoelectronics , electron mobility , gate dielectric , thin film , analytical chemistry (journal) , nanotechnology , chemistry , transistor , metallurgy , medicine , alternative medicine , physics , pathology , voltage , quantum mechanics , chromatography
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