Open AccessFormation of SiCH6-mediated Ge quantum dots with strong field emission properties by ultrahigh vacuum chemical vapor deposition
Author(s) -
S. W. Lee,
YuLun Chueh,
L. J. Chen,
Li-Jen Chou,
P. S. Chen,
M.-J. Tsai,
C. W. Liu
Publication year - 2005
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.2060951
Subject(s) - quantum dot , chemical vapor deposition , nucleation , germanium , materials science , silicon , deposition (geology) , field electron emission , hydrogen , nanotechnology , chemical physics , chemistry , optoelectronics , electron , paleontology , organic chemistry , sediment , biology , physics , quantum mechanics
[[abstract]]Pretreatment of silicon surface with SiCH6 was used to modify the Stranski-Krastanow growth mode of Ge on Si(001) at 550 degrees C by ultrahigh vacuum chemical vapor deposition. With the appropriate SiCH6 mediation, the elongated Ge hut clusters can be transformed to highly uniform multifaceted domes with a high Ge composition at the core. These SiCH6-mediated Ge dots have an average diameter and height of 38 and 7 nm, respectively. The modified growth mode for the formation of SiCH6-mediated Ge dots can be attributed to (i) an almost hydrogen-passivated Si surface to limit the nucleation sites for dot formation and (ii) the incorporation of Ge atoms, repelled by the C-rich areas, into the existing Ge dots. The results also demonstrate that SiCH6-mediated dots exhibit the improved field emission characteristics compared to shallow Ge huts.[[fileno]]2020315010038[[department]]材料科學工程學
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