Open AccessRetraction: “Functional characteristics in asymmetric source/drain InAlAsSb∕InGaAs∕InP δ-doped high electron mobility transistor” [Appl. Phys. Lett. 86, 033505 (2005)]
Author(s) -
C. S. Lee,
W. C. Hsu
Publication year - 2005
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2033141
Subject(s) - doping , transistor , optoelectronics , electron mobility , induced high electron mobility transistor , materials science , electron , condensed matter physics , field effect transistor , physics , voltage , quantum mechanics
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