Chemical states and electronic structure of a HfO2∕Ge(001) interface
Author(s) -
Kang-Ill Seo,
Paul C. McIntyre,
Shiyu Sun,
Dong-Ick Lee,
P. Pianetta,
Krishna C. Saraswat
Publication year - 2005
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.2006211
Subject(s) - fermi level , synchrotron radiation , valence (chemistry) , spectral line , chemical bond , electronic structure , materials science , semimetal , chemical state , germanium , electronic band structure , photoemission spectroscopy , chemistry , x ray photoelectron spectroscopy , analytical chemistry (journal) , band gap , condensed matter physics , silicon , optoelectronics , computational chemistry , nuclear magnetic resonance , optics , electron , physics , organic chemistry , quantum mechanics , astronomy , chromatography
We report the chemical bonding structure and valence band alignment at the HfO{sub 2}/Ge (001) interface by systematically probing various core level spectra as well as valence band spectra using soft x-rays at the Stanford Synchrotron Radiation Laboratory. We investigated the chemical bonding changes as a function of depth through the dielectric stack by taking a series of synchrotron photoemission spectra as we etched through the HfO{sub 2} film using a dilute HF-solution. We found that a very non-stoichiometric GeO{sub x} layer exists at the HfO{sub 2}/Ge interface. The valence band spectra near the Fermi level in each different film structure were carefully analyzed, and as a result, the valence band offset between Ge and GeO{sub x} was determined to be {Delta}E{sub v} (Ge-GeO{sub x}) = 2.2 {+-} 0.15 eV, and that between Ge and HfO{sub 2}, {Delta}E{sub v} (Ge-HfO{sub 2}) = 2.7 {+-} 0.15 eV.
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom