Open AccessThermoelectric properties of lanthanum sesquisulfide with Ti additive
Author(s) -
M. Ohta,
Shinji Hirai,
Hisanaga Kato,
Toshiyuki Nishimura,
Yoichiro Uemura
Publication year - 2005
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1999845
Subject(s) - seebeck coefficient , tetragonal crystal system , electrical resistivity and conductivity , materials science , lanthanum , thermoelectric effect , condensed matter physics , thermal conductivity , phase (matter) , semiconductor , thermoelectric materials , figure of merit , chemistry , thermodynamics , composite material , inorganic chemistry , physics , optoelectronics , organic chemistry , quantum mechanics
The electrical resistivity, thermopower, and thermal conductivity have been measured for the lanthanum sesquisulfide (La2S3) of which the crystal phase is controlled by the Ti additive. In all the samples, the thermopower is negative between 300 and 1000 K. The sample with 8 wt % Ti, which consists almost of the cubic γ phase, behaves as a degenerate semiconductor. The thermoelectric figure of merit ZT increases with increasing temperature, reaching a value of 0.21 at 1000 K. In contrast, the sample with 2 wt % Ti consists almost of the tetragonal β phase. The transport mechanism can be well explained by the model of the Anderson localization. The ZT value increases abruptly with increasing temperature. At 1000 K, this ZT value is comparable with that of the sample with 8 wt % Ti
Accelerating Research
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom
Address
John Eccles HouseRobert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom