Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current | Zendy

T. Buonassisi | Zendy; A. A. Istratov | Zendy; Matthew D. Pickett | Zendy; Matthew A. Marcus | Zendy; Giso Hahn | Zendy; S. Riepe | Zendy; J. Isenberg | Zendy; Wilhelm Warta | Zendy; G. Willeke | Zendy; T. F. Ciszek | Zendy; E. R. Weber | Zendy

Open Access

Quantifying the effect of metal-rich precipitates on minority carrier diffusion length in multicrystalline silicon using synchrotron-based spectrally resolved x-ray beam-induced current

Author(s) -

T. Buonassisi,

A. A. Istratov,

Matthew D. Pickett,

Matthew A. Marcus,

Giso Hahn,

S. Riepe,

J. Isenberg,

Wilhelm Warta,

G. Willeke,

T. F. Ciszek,

E. R. Weber

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1997274

Subject(s) - synchrotron , silicon , materials science , diffusion , x ray absorption spectroscopy , x ray fluorescence , silicide , analytical chemistry (journal) , carrier lifetime , absorption (acoustics) , crystallographic defect , optoelectronics , crystallography , absorption spectroscopy , optics , chemistry , fluorescence , physics , chromatography , composite material , thermodynamics

Synchrotron-based, spectrally resolved x-ray beam-induced current (SR-XBIC) is introduced as a technique to locally measure the minority carrier diffusion length in semiconductor devices. Equivalence with well-established diffusion length measurement techniques is demonstrated. The strength of SR-XBIC is that it can be combined in situ with other synchrotron-based analytical techniques, such as x-ray fluorescence microscopy (μ-XRF) and x-ray absorption microspectroscopy (μ-XAS), yielding information about the distribution, elemental composition, chemical nature, and effect on minority carrier diffusion length of individual transition metal species in multicrystalline silicon. SR-XBIC, μ-XRF, and μ-XAS measurements were performed on intentionally contaminated multicrystalline silicon, revealing a strong correlation between local concentrations of copper and nickel silicide precipitates and a decrease of minority carrier diffusion length. In addition, the reduction of minority carrier diffusion length due t...

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