Carrier recombination in InGaAs(P) Quantum Well Laser Structures: Band gap and Temperature Dependence | Zendy

Stephen J. Sweeney | Zendy

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Carrier recombination in InGaAs(P) Quantum Well Laser Structures: Band gap and Temperature Dependence

Author(s) -

Stephen J. Sweeney

Publication year - 2005

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.1994705

Subject(s) - auger effect , recombination , auger , optoelectronics , materials science , laser , spontaneous emission , atmospheric temperature range , quantum well , range (aeronautics) , gallium arsenide , atomic physics , carrier lifetime , optics , physics , chemistry , silicon , biochemistry , meteorology , composite material , gene

Using a combination of temperature and pressure dependence measurements, we investigate the relative importance of recombination processes in InGaAs‐based QW lasers. We find that radiative and Auger recombination are important in high quality InGaAs material. At 1.5μm, Auger recombination accounts for 80% Ith at room temperature reducing to ∼50% at 1.3μm and ∼15% at 980nm. We also find that Auger recombination dominates the temperature dependence of Ith around room temperature over the entire operating wavelength range studied (980nm–1.5μm).

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