Investigation of Carrier Recombination Processes and Transport Properties in GaInAsN/GaAs Quantum Wells | Zendy

R. Fehse | Zendy

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Investigation of Carrier Recombination Processes and Transport Properties in GaInAsN/GaAs Quantum Wells

Author(s) -

R. Fehse

Publication year - 2005

Publication title -

aip conference proceedings

Language(s) - English

Resource type - Conference proceedings

SCImago Journal Rank - 0.177

H-Index - 75

eISSN - 1551-7616

pISSN - 0094-243X

DOI - 10.1063/1.1994440

Subject(s) - quantum well , recombination , optoelectronics , materials science , current density , gallium arsenide , charge carrier density , current (fluid) , laser , carrier lifetime , condensed matter physics , semiconductor laser theory , chemical physics , semiconductor , chemistry , physics , optics , doping , thermodynamics , silicon , biochemistry , quantum mechanics , gene

It is shown that the dramatic changes in threshold current density with changing active region growth temperature in 1.3μm GaInNAs-based lasers can be attributed almost entirely to changes in the defect related monomolecular recombination current in the optically active material. In addition, growth temperature dependent changes in the QW morphology are shown to have a significant influence on the transport properties of the structure. © 2005 American Institute of Physics

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