Observation Of The Light-Hole Quantum Dots In A Strained GaAs Quantum Well
Author(s) -
Wataru Maruyama
Publication year - 2005
Publication title -
aip conference proceedings
Language(s) - English
Resource type - Conference proceedings
SCImago Journal Rank - 0.177
H-Index - 75
eISSN - 1551-7616
pISSN - 0094-243X
DOI - 10.1063/1.1994310
Subject(s) - quantum dot , quantum well , optoelectronics , quantum point contact , gallium arsenide , materials science , physics , optics , laser
We observed a light-hole-to-electron transition of strain-induced quantum dots (SIQDs) in a strongly strained GaAs quantum well (QW). Circularly-polarized luminescence excitation spectroscopy showed a pronounced counter-circularly polarized component below the heavy-hole exciton transition in the QW. This special feature can be explained by the existence of the light-hole-to-electron transition at this energy level. On the other hand, a very high co-circular polarization (=0.8) was obtained near the lowest transition of SIQD
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