z-logo
open-access-imgOpen Access
Ultrafast carrier dynamics in ZnO nanorods
Author(s) -
ChiKuang Sun,
Shih-Ze Sun,
KungHsuan Lin,
Kenneth Yi-Jie Zhang,
HsiangLin Liu,
Sai-Chang Liu,
JihJen Wu
Publication year - 2005
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1989444
Subject(s) - photoexcitation , exciton , femtosecond , multiple exciton generation , materials science , band gap , thermalisation , biexciton , excitation , nanorod , ultrashort pulse , ionization , phonon , impact ionization , optoelectronics , condensed matter physics , atomic physics , molecular physics , chemistry , nanotechnology , excited state , laser , physics , optics , ion , organic chemistry , quantum mechanics
Free exciton and above-band-gap free carrier dynamics in ZnO nanorods have been investigated at room temperature with a femtosecond transient transmission measurement. Following the photoexcitation of above-band-gap free carriers, an extremely fast external thermalization time on the order of 200 fs can be observed. Under high excitation, hot phonon effects were found to delay the carrier cooling process. While the photoexcitation energy was tuned to match the free exciton transition, stable exciton formation can be uncovered while no evident exciton ionization process can be found unless the photoexcited exciton density exceeded the Mott density.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.
Having issues? You can contact us here
Accelerating Research

Address

John Eccles House
Robert Robinson Avenue,
Oxford Science Park, Oxford
OX4 4GP, United Kingdom