Open AccessEffects of interfacial layers in InGaN∕GaN quantum-well structures on their optical and nanostructural properties
Author(s) -
Yung-Chen Cheng,
Cheng-Ming Wu,
C. C. Yang,
Gang Alan Li,
Andreas Rosenauer,
Kung-Jen Ma,
Shih-Chen Shi,
LiChyong Chen
Publication year - 2005
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1978988
Subject(s) - photoluminescence , electroluminescence , materials science , quantum well , silicon , doping , optoelectronics , light emitting diode , quantum confined stark effect , condensed matter physics , optics , nanotechnology , layer (electronics) , physics , laser
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