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We have studied the temperature-dependent carrier transfer processes in InGaN∕GaN multi-quantum-well light-emitting devices using various optical techniques such as photoluminescence, electroluminescence, and photoluminescence excitation spectra. The role of the defects in the GaN barrier neighboring to the InGaN region was demonstrated clearly in capturing carriers only at low temperatures. The physical origin of the defects was most possibly attributed to the stacking faults at the interface according to the high-resolution transmission electron spectroscopy pictures.

Thermally activated carrier transfer processes in InGaN∕GaN multi-quantum-well light-emitting devices