Open AccessGate oxide induced switch-on undershoot current observed in thin-film transistors
Author(s) -
Feng Yan,
P. Migliorato,
Yi Hong,
Vikas Rana,
Ryoichi Ishihara,
Yasushi Hiroshima,
Daisuke Abe,
Satoshi Inoue,
Tatsuya Shimoda
Publication year - 2005
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1954896
Subject(s) - gate oxide , electron cyclotron resonance , oxide , transistor , optoelectronics , materials science , time dependent gate oxide breakdown , thin film transistor , ion , transient (computer programming) , silicon , thin film , chemical vapor deposition , current (fluid) , analytical chemistry (journal) , voltage , chemistry , electrical engineering , layer (electronics) , nanotechnology , organic chemistry , chromatography , computer science , metallurgy , operating system , engineering
The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain. Switch-on undershoot current has been observed, which can be attributed to the motion of space charge in gate oxide. Assuming there are some mobile ions in the gate oxide, we find the drift kinetics of the ions is quite similar to the mobile protons in SiO2, as reported in the literature.Microelectronics & Computer EngineeringElectrical Engineering, Mathematics and Computer Scienc
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