Effect of antiphase boundaries on electrical transport properties of Fe3O4 nanostructures | Zendy

Hongliang Li | Zendy; Yihong Wu | Zendy; Zaibing Guo | Zendy; Shijie Wang | Zendy; K. L. Teo | Zendy; Teodor Veres | Zendy

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Effect of antiphase boundaries on electrical transport properties of Fe3O4 nanostructures

Author(s) -

Hongliang Li,

Yihong Wu,

Zaibing Guo,

Shijie Wang,

K. L. Teo,

Teodor Veres

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1952572

Subject(s) - magnetoresistance , nanowire , condensed matter physics , materials science , charge ordering , thin film , nanostructure , quantum tunnelling , electrical resistivity and conductivity , conductance , magnetite , anisotropy , nanotechnology , magnetic field , optoelectronics , charge (physics) , metallurgy , optics , engineering , electrical engineering , physics , quantum mechanics

Fe3O4 nanowires have been fabricated based on Fe3O4 thin films grown on a-Al2O3 s0001d substrates using the hard mask and ion milling technique. Compared with thin films, the Fe3O4 nanowire exhibits a slightly sharper Verwey transition but pronounced anisotropic magnetoresistance properties in the film plane at low magnetic field. Detailed bias-dependence study of both the conductance and magnetoresistance curves for both the thin films and nanowires suggests that the electrical conduction in magnetite near and above the Verwey transition temperature is dominated by a tunneling mechanism across antiphase boundaries.Peer reviewed: YesNRC publication: Ye

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