Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well | Zendy

M. C. Hickey | Zendy; Christian Danvad Damsgaard | Zendy; I. Farrer | Zendy; S. N. Holmes | Zendy; Anke Husmann | Zendy; J. Bindslev Hansen | Zendy; Claus S. Jacobsen | Zendy; D. A. Ritchie | Zendy; R. F. Lee | Zendy; G. A. C. Jones | Zendy; M. Pepper | Zendy

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Spin injection between epitaxial Co2.4Mn1.6Ga and an InGaAs quantum well

Author(s) -

M. C. Hickey,

Christian Danvad Damsgaard,

I. Farrer,

S. N. Holmes,

Anke Husmann,

J. Bindslev Hansen,

Claus S. Jacobsen,

D. A. Ritchie,

R. F. Lee,

G. A. C. Jones,

M. Pepper

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1949722

Subject(s) - condensed matter physics , spin polarization , andreev reflection , materials science , spins , schottky barrier , hanle effect , polarization (electrochemistry) , epitaxy , spin (aerodynamics) , molecular beam epitaxy , magnetic field , schottky diode , optoelectronics , quantum well , electron , chemistry , optics , physics , laser , nanotechnology , superconductivity , layer (electronics) , quantum mechanics , thermodynamics , diode

Electrical spin injection in a narrow [100] In0.2Ga0.8As quantum well in a GaAs p‐i‐n optical device is reported. The quantum well is located 300nm from an AlGaAs Schottky barrier and this system is used to compare the efficiencies and temperature dependences of spin injection from Fe and the Heusler alloy Co2.4Mn1.6Ga grown by molecular-beam epitaxy. At 5K, the injected electron spin polarizations for Fe and Co2.4Mn1.6Ga injectors are 31% and 13%, respectively. Optical detection is carried out in the oblique Hanle geometry. A dynamic nuclear polarization effect below 10K enhances the magnetic field seen by the injected spins in both devices. The Co2.4Mn1.6Ga thin films are found to have a transport spin polarization of ∼50% by point contact Andreev reflection conductivity measurements.

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