Open AccessDetermination of strain-induced valence-band splitting in GaAsN thin films from circularly polarized photoluminescence
Author(s) -
A. Yu. Egorov,
V. K. Kalevich,
M. M. Afanasiev,
A. Yu. Shiryaev,
V. M. Ustinov,
Michio Ikezawa,
Yasuaki Masumoto
Publication year - 2005
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1949718
Subject(s) - photoluminescence , materials science , circular polarization , nitrogen , valence band , strain (injury) , valence (chemistry) , polarization (electrochemistry) , band gap , condensed matter physics , analytical chemistry (journal) , optoelectronics , molecular physics , optics , chemistry , physics , medicine , chromatography , microstrip , organic chemistry
The paper studies the circularly polarized photoluminescence (PL) from dilute GaAsN alloys with nitrogen content of 1%–3.4%, grown on GaAs substrates. The room-temperature PL is found to consist of two bands whose splitting grows with increasing nitrogen content. The analysis of the PL circular polarization has shown that the PL bands originate from the splitting of light- and heavy-hole subbands, induced by an elastic strain in GaAsN layer. The dependence of the energy gap of unstrained GaAsN on the nitrogen content has been calculated using the measured light- and heavy-hole splittings
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