Near-band-edge slow luminescence in nominally undoped bulk ZnO | Zendy

T. Monteiro | Zendy; A.J. Neves | Zendy; M.C. Carmo | Zendy; M.J. Soares | Zendy; M. Peres | Zendy; J. Wang | Zendy; E. Alves | Zendy; E. Rita | Zendy; U. Wahl | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Near-band-edge slow luminescence in nominally undoped bulk ZnO

Author(s) -

T. Monteiro,

A.J. Neves,

M.C. Carmo,

M.J. Soares,

M. Peres,

J. Wang,

E. Alves,

E. Rita,

U. Wahl

Publication year - 2005

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1946200

Subject(s) - luminescence , exciton , acceptor , materials science , photoluminescence , spectroscopy , emission spectrum , spectral line , shallow donor , enhanced data rates for gsm evolution , molecular physics , atomic physics , chemistry , optoelectronics , doping , condensed matter physics , physics , telecommunications , quantum mechanics , astronomy , computer science

We report the observation of slow emission bands overlapped with the near-band-edge steady-state luminescence of nominally undoped ZnO crystals. At low temperatures the time-resolved spectra are dominated by the emission of several high-energy bound exciton lines and the two-electron satellite spectral region. Furthermore, two donor-acceptor pair transitions at 3.22 and 3.238 eV are clearly identified in temperature-dependent time-resolved spectroscopy. These donor-acceptor pairs involve a common shallow donor at 67 meV and deep acceptor levels at 250 and 232 meV.FCT/FEDER - POCTI/CTM/45236/0

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research