Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices | Zendy

J. Sun | Zendy; W. Skorupa | Zendy; T. Dekorsy | Zendy; M. Helm | Zendy; L. Rebohle | Zendy; T. Gebel | Zendy

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Bright green electroluminescence from Tb3+ in silicon metal-oxide-semiconductor devices

Author(s) -

J. Sun,

W. Skorupa,

T. Dekorsy,

M. Helm,

L. Rebohle,

T. Gebel

Publication year - 2005

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1935766

Subject(s) - electroluminescence , materials science , optoelectronics , photoluminescence , oxide , luminescence , quantum efficiency , annealing (glass) , indium tin oxide , light emitting diode , silicon , semiconductor , terbium , nanotechnology , thin film , metallurgy , layer (electronics)

Bright green electroluminescence with luminance up to 2800cd∕m2 is reported from indium-tin-oxide∕SiO2:Tb∕Si metal-oxide-semiconductor devices. The SiO2:Tb3+ gate oxide was prepared by thermal oxidation followed by Tb+ implantation. Electroluminescence and photoluminescence properties were studied with variations of the Tb3+ ion concentration and the annealing temperature. The optimized device shows a high external quantum efficiency of 16% and a luminous efficiency of 2.1lm∕W. The excitation processes of the strong green electroluminescence are attributed to the impact excitation of the Tb3+ luminescent centers by hot electrons and the subsequent crossrelaxation from D35 to D45 energy levels. Light-emitting devices with micrometer size fabricated by the standard metal-oxide-semiconductor technology are demonstrated.

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