Near-infrared intersubband transitions in InGaAs–AlAs–InAlAs double quantum wells | Zendy

M. P. Semtsiv | Zendy; Mathias Ziegler | Zendy; W. T. Masselink | Zendy; Nikolai I. Georgiev | Zendy; T. Dekorsy | Zendy; M. Helm | Zendy

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Near-infrared intersubband transitions in InGaAs–AlAs–InAlAs double quantum wells

Author(s) -

M. P. Semtsiv,

Mathias Ziegler,

W. T. Masselink,

Nikolai I. Georgiev,

T. Dekorsy,

M. Helm

Publication year - 2005

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1931037

Subject(s) - quantum well , oscillator strength , molecular beam epitaxy , infrared , gallium arsenide , absorption (acoustics) , optoelectronics , materials science , condensed matter physics , wavelength , atomic physics , epitaxy , physics , optics , laser , spectral line , nanotechnology , layer (electronics) , astronomy

Intersubband optical transitions at short wavelengths in strain-compensated In0.70Ga0.30As—AlAs double quantum wells are investigated by means of mid-infrared absorption. Trade-offs between achieving a high transition energy and a large oscillator strength of the two highest-energy intersubband transitions using our strain-compensation approach are analyzed as a function of the widths of the two wells. Two design strategies leading to relatively strong intersubband optical transitions at 800 meV, 1.55μm, are described and the corresponding structures grown using gas-source molecular-beam epitaxy on (001)InP are investigated. The strongest intersubband transitions obtained experimentally are generally between 300 and 600 meV, 2–4μm. Significant oscillator strength, however, also extends out to 800 meV, 1.55μm.

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