Open AccessTransverse-electric-field-enhanced response in InAs∕AlGaAs∕GaAs quantum-dot infrared photodetectors
Author(s) -
Shen-De Chen,
YungMing Chen,
SiChen Lee
Publication year - 2005
Publication title -
applied physics letters
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1929881
Subject(s) - quantum dot , photodetector , materials science , optoelectronics , electric field , infrared , condensed matter physics , excited state , annealing (glass) , gallium arsenide , transverse plane , optics , physics , atomic physics , structural engineering , quantum mechanics , composite material , engineering
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