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Recombination activity of iron-gallium and iron-indium pairs in silicon
Author(s) -
Jan Schmidt,
Daniel Macdonald
Publication year - 2005
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1929096
Subject(s) - gallium , silicon , recombination , indium , carrier lifetime , materials science , wafer , doping , analytical chemistry (journal) , atomic physics , chemistry , optoelectronics , physics , metallurgy , biochemistry , chromatography , gene
J.S. thanks A. Cuevas and A. Blakers for their hospitality during his research stay at ANU and acknowledges the financial support of the Alexander von Humboldt Foundation. D.M. acknowledges the financial support of the Australian Research Council.

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