Open AccessMechanical stability of ultrathin Ge∕Si film on SiO2: The effect of Si∕SiO2 interface
Author(s) -
Minghuang Huang,
John A. Nairn,
Feng Liu,
M. G. Lagally
Publication year - 2005
Publication title -
journal of applied physics
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.699
H-Index - 319
eISSN - 1089-7550
pISSN - 0021-8979
DOI - 10.1063/1.1926421
Subject(s) - slippage , void (composites) , materials science , silicon , composite material , layer (electronics) , finite element method , optoelectronics , structural engineering , engineering
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