Resonant-tunneling electron emitter in an AlN∕GaN system | Zendy

Atsuko Ishida | Zendy; Y. Inoue | Zendy; H. Fujiyasu | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Resonant-tunneling electron emitter in an AlN∕GaN system

Author(s) -

Atsuko Ishida,

Y. Inoue,

H. Fujiyasu

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1922081

Subject(s) - quantum tunnelling , common emitter , heterojunction , materials science , optoelectronics , wide bandgap semiconductor , electron , field electron emission , polarization (electrochemistry) , condensed matter physics , physics , chemistry , quantum mechanics

An AlN∕GaN multiple-barrier resonant-tunneling electron emitter is proposed in this letter, utilizing polarization fields in the AlN∕GaN heterostructure. The resonant-tunneling voltage is extremely high, compared with usual resonant-tunneling devices, due to the polarization field in the heterostructure, and this high resonant voltage enables practical use of the devices. Selective and high-density electron emission is to be expected through the resonant-tunneling layer and GaN surface accelerating layer.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research