Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors | Zendy

N. Dyakonova | Zendy; F. Teppe | Zendy; J. Łusakowski | Zendy; W. Knap | Zendy; M. E. Levinshteĭn | Zendy; А. П. Дмитриев | Zendy; M. S. Shur | Zendy; S. Bollaert | Zendy; A. Cappy | Zendy

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Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

Author(s) -

N. Dyakonova,

F. Teppe,

J. Łusakowski,

W. Knap,

M. E. Levinshteĭn,

А. П. Дмитриев,

M. S. Shur,

S. Bollaert,

A. Cappy

Publication year - 2005

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1921339

Subject(s) - magnetic field , excitation , terahertz radiation , materials science , optoelectronics , electron mobility , electron , magnetoresistance , condensed matter physics , field effect transistor , transistor , voltage , physics , quantum mechanics

The influence of the magnetic field on the excitation of plasma waves in InGaAs/AlInAs lattice matched high electron mobility transistors is reported. The threshold source-drain voltage of the excitation of the terahertz emission shifts to higher values under a magnetic field increasing from 0 to 6 T. We show that the main change of the emission threshold in relatively low magnetic fields (smaller than approximately 4 T) is due to the magnetoresistance of the ungated parts of the channel. In higher magnetic fields, the effect of the magnetic field on the gated region of the device becomes important. (C) 2005 American Institute of Physics

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