An interface-proximity model for switchable interfacial uncompensated antiferromagnetic spins and their role in exchange bias
Author(s) -
KiSuk Lee,
YoungSang Yu,
SangKoog Kim
Publication year - 2005
Publication title -
applied physics letters
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 1.182
H-Index - 442
eISSN - 1077-3118
pISSN - 0003-6951
DOI - 10.1063/1.1920412
Subject(s) - exchange bias , antiferromagnetism , spins , condensed matter physics , ferromagnetism , coercivity , materials science , layer (electronics) , exchange interaction , field (mathematics) , biasing , magnetic field , physics , nanotechnology , magnetic anisotropy , magnetization , voltage , mathematics , quantum mechanics , pure mathematics
We propose an interface-proximity model that allows us to solve a longstanding puzzle regarding large discrepancies between the experimentally observed and theoretically estimated values of exchange-bias field Heb in coupled ferromagneticantiferromagnetic (FAF) metallic films. In this proposed model, switchable uncompensated (UC) AF spins in contact with an F layer are taken into account as an additionally inserting layer that is chemically or magnetically distinguishable from each of the nominal AF and F layers. Reductions in Heb, enhancements in coercivity, and other exchange-bias behaviors typically observed in experiments are very well reproduced from this model. The switchable interfacial UC region with a sizable thickness, heretofore ignored, plays a crucial role in the exchange bias phenomenon.open6
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