Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures | Zendy

Khalid Eid | Zendy; B. L. Sheu | Zendy; O. Maksimov | Zendy; M. B. Stone | Zendy; P. Schiffer | Zendy; N. Samarth | Zendy

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Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures

Author(s) -

Khalid Eid,

B. L. Sheu,

O. Maksimov,

M. B. Stone,

P. Schiffer,

N. Samarth

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1900938

Subject(s) - curie temperature , annealing (glass) , materials science , ferromagnetism , condensed matter physics , nanolithography , nanowire , magnetic semiconductor , heterojunction , electrical resistivity and conductivity , curie , semiconductor , ferromagnetic material properties , optoelectronics , magnetization , metallurgy , fabrication , magnetic field , medicine , physics , alternative medicine , engineering , pathology , electrical engineering , quantum mechanics

We demonstrate the manipulation of the Curie temperature of buried layers ofthe ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance theeffect of annealing. Patterning the GaAs-capped ferromagnetic layers intonanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)Aslayers and thus allows the removal of Mn interstitials using annealing. Thisleads to an enhanced Curie temperature and reduced resistivity compared tounpatterned samples. For a fixed annealing time, the enhancement of the Curietemperature is larger for narrower nanowires.Comment: Submitted to Applied Physics Letters (minor corrections

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