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We demonstrate the manipulation of the Curie temperature of buried layers ofthe ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance theeffect of annealing. Patterning the GaAs-capped ferromagnetic layers intonanowires exposes free surfaces at the sidewalls of the patterned (Ga,Mn)Aslayers and thus allows the removal of Mn interstitials using annealing. Thisleads to an enhanced Curie temperature and reduced resistivity compared tounpatterned samples. For a fixed annealing time, the enhancement of the Curietemperature is larger for narrower nanowires.Comment: Submitted to Applied Physics Letters (minor corrections

Nanoengineered Curie temperature in laterally patterned ferromagnetic semiconductor heterostructures