Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor | Zendy

Tetsuya Kitade | Zendy; Kensaku Ohkura | Zendy; Anri Nakajima | Zendy

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Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor

Author(s) -

Tetsuya Kitade,

Kensaku Ohkura,

Anri Nakajima

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1894594

Subject(s) - coulomb blockade , transistor , oscillation (cell signaling) , materials science , doping , optoelectronics , series (stratigraphy) , electron , coulomb , condensed matter physics , electrical engineering , physics , voltage , chemistry , engineering , quantum mechanics , biology , paleontology , biochemistry

We fabricated highly doped Si single-electron transistors (SETs) with a series of geometrically defined multiple islands. Highly doped SETs have the advantage of being easy to fabricate. Moreover, SETs with multiple islands provide a larger peak-to-valley current ratio (PVCR) than SETs with a single island. A PVCR for the Coulomb oscillation of up to 77 was observed at room temperature. This large PVCR is advantageous for circuit operations. We applied the Coulomb oscillation and multiple-gate input characteristics of only one SET to obtain an exclusive-OR operation at room temperature.

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