Determination of in-depth density profiles of multilayer structures | Zendy

M. J. H. Kessels | Zendy; F. Bijkerk | Zendy; F.D. Tichelaar | Zendy; J. Verhoeven | Zendy

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Determination of in-depth density profiles of multilayer structures

Author(s) -

M. J. H. Kessels,

F. Bijkerk,

F.D. Tichelaar,

J. Verhoeven

Publication year - 2005

Publication title -

journal of applied physics

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.699

H-Index - 319

eISSN - 1089-7550

pISSN - 0021-8979

DOI - 10.1063/1.1882773

Subject(s) - reflectometry , materials science , intensity (physics) , transmission electron microscopy , homogeneous , optics , transmission (telecommunications) , computational physics , nanotechnology , physics , statistical physics , computer science , time domain , telecommunications , computer vision

We developed and demonstrate an analysis method in which we calibrate the intensity scale of cross-sectional transmission electron microscopy (TEM) using Cu K? reflectometry. This results in quantitative in-depth density profiles of multilayer structures. Only three free parameters are needed to obtain the calibrated profiles, corresponding to three TEM image intensity levels. Additionally, the optical indices of the two multilayer materials used and the assumption that the layers are laterally homogeneous are used in the model. The power and the general usefulness of the method is demonstrated using experimental data of W/Si and Mo/Si multilayer systems with sharp interfaces as well as multilayers of which the interfaces were deliberately intermixed

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