Controlling the properties of InGaAs quantum dots by selective-area epitaxy | Zendy

S. Mokkapati | Zendy; P. Lever | Zendy; Hark Hoe Tan | Zendy; C. Jagadish | Zendy; Katie E. McBean | Zendy; Matthew R. Phillips | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

Controlling the properties of InGaAs quantum dots by selective-area epitaxy

Author(s) -

S. Mokkapati,

P. Lever,

Hark Hoe Tan,

C. Jagadish,

Katie E. McBean,

Matthew R. Phillips

Publication year - 2005

Publication title -

applied physics letters

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 1.182

H-Index - 442

eISSN - 1077-3118

pISSN - 0003-6951

DOI - 10.1063/1.1875745

Subject(s) - quantum dot , cathodoluminescence , wafer , materials science , optoelectronics , molecular beam epitaxy , substrate (aquarium) , epitaxy , band gap , nanotechnology , gallium arsenide , luminescence , oceanography , geology , layer (electronics)

Selective growth of InGaAs quantum dots on GaAs is reported. It is demonstrated that selective-area epitaxy can be used for in-plane bandgap energy control of quantum dots. Atomic force microscopy and cathodoluminescence are used for characterization of the selectively grown dots. Our results show that the composition, size, and uniformity of dots are determined by the dimensions of the mask used for patterning the substrate. Properties of dots can be selectively tuned by varying the mask dimensions. A single-step growth of a thin InGaAs quantum well and InGaAs quantum dots on the same wafer is demonstrated. By using a single-step growth, dots luminescing at different wavelengths, in the range 1150–1230nm, in different parts of the same wafer are achieved.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research